unisonic technologies co., ltd 2sk508 n-channel jfet www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r206-101.c high frequency amplifier n-channel silicon junction field effect transistor ? description the utc 2sk508 is npn transistor with high forward transfer admittance and low input capacitance. it is suitable for cordless telephone, am tuner and wireless installation, etc. ? features * high forward transfer admittance * low input capacitance sot-23 (jedec to-236) 1 2 3 ? ordering information ordering number package pin assignment packing 1 2 3 2SK508G-X-AE3-R sot-23 d s g tape reel note: pin assignment: d: drain s: source g: gate ? marking
2sk508 n-channel jfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-101.c ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit gate to drain voltage v gdo -15 v gate to source voltage v gso -15 v drain to source voltage (v gs =-4.0 v) v dsx 15 v drain current (dc) i d 50 ma gate current (dc) i g 5 ma power dissipation p d 200 mw junction temperature t j 150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit gate cut-off current i gss v gs =-10v, v ds =0v -1.0 na zero gate voltage drain current (note) i dss v ds =5.0v, v gs =0v 10 20 50 ma gate to source cut-off voltage v gs ( off ) v ds =5.0v, i d =10 a -0.6 -1.4 -3.5 v forward transfer admittance (note) |y fs |1 v ds =5.0v, i d =10ma, f=1.0khz 14 19 ms |y fs |2 v ds =5.0v, v gs =0v, f=1.0khz 14 26 ms input capacitance c iss v ds =5.0v, i d =10ma, f=1.0mhz 4.8 pf feedback capacitance c rss v ds =5.0v, i d =10ma, f=1.0mhz 1.6 pf note: pulsed: p w 1ms, duty cycle 1%. ? i dss classification marking k51 k52 k53 i dss (ma) 10 ~ 20 15 ~ 30 25 ~ 50
2sk508 n-channel jfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-101.c ? typical characteristics drain current, i d (ua) gate-source voltage, v dsx (v) 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 v gs =-4v drain current, i d (ma) drain-source voltage, v ds (v) 0 5 10 15 20 25 0510 15 20 30 35 0 25 250 200 50 75 100 125 150 175 ambient temperature, t a (c) 0 power dissipation, p d (mw) power dissipation vs. ambient temperature 50 100 150 300 drain current vs. drain-source voltage drain current vs. gate-source voltage v gs =0v v gs =-0.2v v gs =-0.4v v gs =-0.6v v gs =-0.8v v gs =-1.0v utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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